R8002ANX - Rohm

R8002ANX Power MOSFET

R8002ANX Nch 800V 2A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner circuit (1) (2) (3) (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain *1 (3) Source *1 Body Diode 5) Parallel use is e.

Features

1) Low on-resistance. 800V 4.3 2A 36W
Outline TO-220FM
Inner circuit (1) (2) (3) (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain
*1 (3) Source
*1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant
Packaging specifications Packaging Bulk
Application Switching Power Supply Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) 500 Taping code - Marking R8002ANX
Absolute maximum ratings(Ta = 25C) Parameter Symbol Value Unit Drain - Source v.