R8003KND3 - ROHM

R8003KND3 Power MOSFET

R8003KND3 　　Nch 800V 3A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 1.8Ω ±3A 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ratings (Ta = 25°C .

Features

1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID
*1 IDP
*2 800 V ±3 A ±9 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse IAS EAS
*3 0.6 A 19 mJ Power dissipation (.