·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 66 W TJ Max. Operatin.
·Drain Current
–ID= 8A@ TC=25℃
·Drain Source Voltage-
: VDSS=800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.03Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Pluse
32
A
PD
Total Dissipation @TC=25℃
66
W
TJ
Max..
R8008ANX Nch 800V 8A Power MOSFET Datasheet VDSS 800V lOutline RDS(on)(Max.) 1.03Ω ID ±8A TO-220FM PD .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R8008ANJ |
ROHM |
Power MOSFET | |
2 | R8008ANJ |
INCHANGE |
N-Channel MOSFET | |
3 | R8008ANJFRG |
ROHM |
Power MOSFET | |
4 | R8001CND |
ROHM |
Power MOSFET | |
5 | R8002ANJ |
ROHM |
Power MOSFET | |
6 | R8002ANJ |
INCHANGE |
N-Channel MOSFET | |
7 | R8002ANJFRG |
ROHM |
Power MOSFET | |
8 | R8002ANX |
Rohm |
Power MOSFET | |
9 | R8002ANX |
INCHANGE |
N-Channel MOSFET | |
10 | R8002CND |
ROHM |
Power MOSFET | |
11 | R8003KND3 |
ROHM |
Power MOSFET | |
12 | R8005ANJ |
ROHM |
Power MOSFET |