R8005ANX Nch 800V 5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 2.08 5A 51W Outline TO-220FM Inner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) 5) Parallel use is easy. ∗1 (2) (3) (1) Gate (2) Drain (3) Source 1 .
1) Low on-resistance.
800V 2.08
5A 51W
Outline
TO-220FM
Inner circuit
(1) (2) (3)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1)
5) Parallel use is easy.
∗1
(2)
(3)
(1) Gate (2) Drain (3) Source
1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Bulk
Reel size (mm)
-
Application Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
Marking
R8005ANX
Absolute maximum ratings(Ta = 25°C) Parameter
Symbol
Value
Unit
Drain .
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Stand.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | R8005ANJ |
ROHM |
Power MOSFET | |
2 | R8005ANJ |
INCHANGE |
N-Channel MOSFET | |
3 | R8005ANJFRG |
ROHM |
Power MOSFET | |
4 | R8001CND |
ROHM |
Power MOSFET | |
5 | R8002ANJ |
ROHM |
Power MOSFET | |
6 | R8002ANJ |
INCHANGE |
N-Channel MOSFET | |
7 | R8002ANJFRG |
ROHM |
Power MOSFET | |
8 | R8002ANX |
Rohm |
Power MOSFET | |
9 | R8002ANX |
INCHANGE |
N-Channel MOSFET | |
10 | R8002CND |
ROHM |
Power MOSFET | |
11 | R8003KND3 |
ROHM |
Power MOSFET | |
12 | R8008ANJ |
ROHM |
Power MOSFET |