QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67F6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver 1. July. 2008 ♦OVERVIEW QL67F6S.
- Visible Light Output : λp = 670 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL67F6SA Fig. 2 QL67F6SB Fig. 3 QL67F6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦EL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | QL67F6S-A |
QSI |
LASER DIODE | |
2 | QL67F6S-B |
QSI |
LASER DIODE | |
3 | QL67D6S-A |
QSI |
LASER DIODE | |
4 | QL67D6S-B |
QSI |
LASER DIODE | |
5 | QL67D6S-C |
QSI |
LASER DIODE | |
6 | QL67D6SA |
Roithner LaserTechnik |
InGaAlP Laser Diode | |
7 | QL63D4S-A |
QSI |
LASER DIODE | |
8 | QL63D4S-B |
QSI |
LASER DIODE | |
9 | QL63D4S-C |
QSI |
LASER DIODE | |
10 | QL63D4SA |
Roithner LaserTechnik |
InGaAlP Laser Diode | |
11 | QL63D5S-A |
QSI |
LASER DIODE | |
12 | QL63D5S-B |
QSI |
LASER DIODE |