QL63D4S-B - QSI

QL63D4S-B LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL63D4S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL63D4S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 3 2006 ♦OVERVIEW QL63D4S-A/B.

Features

- Visible Light Output : λp = 635 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL63D4SA Fig. 2 QL63D4SB Fig. 3 QL63D4SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 6 2 30 −10 ~ +40 −40 ~ +85 Unit mW V V °C °C ♦ELE.