QL63D4SA - Roithner LaserTechnik

QL63D4SA InGaAlP Laser Diode

QL63D4SA InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL63D5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules. ♦APPLICATION - Laser Pointer - Optical Leveler - Laser Module ♦FEATURES - Visible Lig.

Features

- Visible Light Output: λp = 635 nm (TM Mode) - Optical Power Output: 5 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 5 2 30 −10 ~ +40 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing W.