QL63F5SA - Roithner Lasertechnik

QL63F5SA InGaAlP Laser Diode

www.DataSheet4U.com QL63F5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63F5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for optoelectronic devices such as Optical Leveler and Modules. ♦ APPLICATION - Optical Leveler - Optical Module - Bar Code Read.

Features

- Visible Light Output: λp = 635 nm (TM Mode) - Optical Power Output: 10 mW CW - Package Type: TO-18 (5.6 mmφ ) - Built-in Photo Diode for Monitoring Laser Diode ♦ ELECTRICAL CONNECTION Bottom View Pin Configuration www.DataSheet4U.com ♦ ABSOLUTE MAXIMUM RATING at Tc=25° C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +50 −40 ~ +85 Unit mW V V °C °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25° C Items Optical Output Power Threshold Current Operating Current Op.