Q62702-B916 - Siemens Semiconductor Group

Q62702-B916 Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)

BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread 2 1 VES05991 Type BBY 58-02W Marking 8 Orderi.

Features

.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 58-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -2 32 pF 1/°C CT 24 T Cc 20 10 -3 16 12 8 4 10 -4 0.0 0.5 .