Q62702-B0858 - Siemens Semiconductor Group

Q62702-B0858 Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)

BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 2 1 VES05991 Type BBY 51-02W Marking I Ordering Code Q62702-B0858 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltag.

Features

4 V, f = 1 MHz Capacitance ratio CT1/C T4 C1V-C 3V C3V-C 4V rs CC Ls 1.55 1.4 0.3 - pF VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-23-1998 1998-11-01 BBY 51-02W Diode capacitance CT = f (V R) f = 1MHz EHD07128 Temperature coefficient TCc = f (V R), per diode, f = 1MHz 10 CT pF 8 10 4 ppa TCC C EHD07129 10 3 6 4 10 2 2 0 0 2 4 .