PZTA65 - Fairchild Semiconductor

PZTA65 PNP Darlington Transistor

MPSA65 / MMBTA65 / PZTA65 Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C BE TO-92 C SOT-23 Mark: 2W E B C SOT-223 C B E PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* .

Features

TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient MPSA65 625 5.0 83.3 200 Max
*MMBTA65 350 2.8 357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
*
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
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*PZTA65 1,000 8.0 125 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation A65, Rev A MPSA65 / MMBTA65 / PZTA65 PNP Darlington Transistor (continued) Electrical Characteristics Sy.