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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA64 TRANSISTOR (PNP) FEATURES Low Voltage and High Current High Current Gain Applications SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Em.
Low Voltage and High Current
High Current Gain Applications
SOT-223
1. BASE 2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-30
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-10
IC Collector Current
-500
PC Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
Unit V V V mA W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Col.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PZTA63 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors |
|
| 2 | PZTA63 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 3 | PZTA64T1 |
Motorola |
PNP Transistor |
|
| 4 | PZTA65 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 5 | PZTA06 |
UTC |
AMPLIFIER TRANSISTOR |
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| 6 | PZTA06 |
NXP |
NPN transistor |
|
| 7 | PZTA06 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 8 | PZTA13 |
Siemens Semiconductor Group |
NPN Silicon Darlington Transistors |
|
| 9 | PZTA13 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 10 | PZTA13 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 11 | PZTA14 |
SeCoS |
NPN Transistor |
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| 12 | PZTA14 |
JCET |
NPN Transistor |
|