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PZT5551 NPN Silicon Planar Epitaxial Transistor BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation Junction Temperature Storage, Temperature Symbol VCEO VCB.
, I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA) Symbol hFE1 hFE2 hFE3 VCE(sat) Min 80 80 50 - Typ 160 - Max 400 0.15 0.2 1 Unit - Collector-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) V V V Base-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) VBE(sat) DYNAMIC CHARACTERISTICS Current-Gain (VCE = 10V, IC = 10mA, f = 100MHz) fT Cob 100 - - 300 6 MHz pF Output Capacitance (VCB = 10V, IE = 0, f = 1MHz) CLASSIFICATION OF hFE2 Rank Range A 80 - 200 N 100 - 250 C 160 - 400 WEITRON http://www.weitron.com.tw 2 /4 05-Jul-0.
PZT5551 - UTC
UNISONIC TECHNOLOGIES CO., LTD PZT5551 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VC.
PZT5551 - GOOD-ARK
PZT5551 NPN Transistor Features ■ High voltage ■ For high voltage amplifier applications Absolute Maximum Ratings (TA .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PZT559 |
SeCoS |
PNP Silicon Planar |
|
| 2 | PZT559A-C |
SeCoS |
PNP Transistor |
|
| 3 | PZT5401 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR |
|
| 4 | PZT158 |
SeCoS |
Silicon Planar High Current Transistor |
|
| 5 | PZT159 |
Weitron Technology |
PNP Silicon Planar High Current Transistor |
|
| 6 | PZT159 |
SeCoS |
High Current Transistor |
|
| 7 | PZT1816 |
UTC |
NPN PLANAR TRANSISTOR |
|
| 8 | PZT194 |
SeCoS |
Silicon Planar Medium Power Transistor |
|
| 9 | PZT195 |
SeCoS |
Medium Power Transistor |
|
| 10 | PZT2222 |
Siemens Semiconductor Group |
NPN Silicon Switching Transistors |
|
| 11 | PZT2222 |
Diotec |
Suface Mount Si-Epitaxial Planar Switching Transistors |
|
| 12 | PZT2222A |
NXP |
NPN switching transistor |
|