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NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complementary types: PZT 2907 (PNP) PZT 2907 A (PNP) q Type PZT 2222 PZT 2222 A Marking ZT 2222 ZT 2222 A Ordering Code (tape and reel) Q62702-Z2026 Q62702-Z2027 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 .
nless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V, IC = 0 Collector-emitter cutoff current VCE = 30 V,
– VBE = 0.5 V Emitter-base cutoff current VCE = 30 V,
– VBE = 0.5 V DC current gain1) IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150.
PZT2222 - Diotec
PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PZT2222A |
NXP |
NPN switching transistor |
|
| 2 | PZT2222A |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | PZT2222A |
TAITRON |
SMD General Purpose Transistor |
|
| 4 | PZT2222A |
UTC |
NPN GENERAL PURPOSE AMPLIFIER |
|
| 5 | PZT2222A |
WEITRON |
NPN Silicon Planar Epitaxial Transistor |
|
| 6 | PZT2222A |
Diotec |
Suface Mount Si-Epitaxial Planar Switching Transistors |
|
| 7 | PZT2222A |
SeCoS |
General Purpose Transistor |
|
| 8 | PZT2222A |
Kexin |
NPN Transistors |
|
| 9 | PZT2222A |
ON Semiconductor |
NPN Silicon Planar Epitaxial Transistor |
|
| 10 | PZT2222A-C |
SeCoS |
NPN Transistor |
|
| 11 | PZT2222AT1 |
Motorola |
NPN Silicon Planar Epitaxial Transistor |
|
| 12 | PZT2907 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors |
|