PZT159 - Weitron Technology

PZT159 PNP Silicon Planar High Current Transistor

PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free www.DataSheet4U.net COLLECTOR 2, 4 BASE 1 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Collector Current Total Device Dis.

Features

100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON http://www.weitron.com.tw 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Base-Emitter Saturation Voltage IC=-5A, IB=-500mA Base-Emitter On Voltage VCE=-1V, IC=-5A hFE1 hFE2 hFE3 hFE4 VCE(sat) 100 100 75 10 - 200 200 90 25 -20 -85 -155 -370 -1.0.