The PY25Q512HB-Auto is a serial interface Flash memory device designed for use in a wide variety of highvolume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, elimina.
P# Pin
One Time Programmable (OTP) Security Register - 3
*1024-Byte Security Registers with OTP Lock
128-bit Unique ID for each device
Fast Program and Erase Speed Typical
- 0.25ms
Page program time
- 30ms
4K-byte sector erase time
- 0.10/0.15s 32K/64K-byte block erase time
- 64s
Full chip erase time
JEDEC Standard Manufacturer and Device ID Read Methodology
Ultra-Low Power Consumption Typical
- 2uA
Deep Power Down current
- 50uA
Standby current
- 12mA
Active Read current at 80MHz 4IO
- 12mA
Active Program or Erase current
High Reliability
- 100,000 Program / E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PY25Q01GLC |
Puya |
1G-bit Serial Multi I/O Flash Memory | |
2 | PY25Q16HB-Automotive |
Puya |
16M-bit Serial Multi I/O Flash Memory | |
3 | PY25F64HA |
Puya |
64M-bit Serial Multi I/O Flash Memory | |
4 | PY263 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
5 | PY264 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
6 | PY291A |
PYRAMID |
2K x 8 rEpROGRAMMABLE prom | |
7 | PY08 |
LEONE |
Relay Socket | |
8 | PY08-0 |
LEONE |
Relay Socket | |
9 | PY10 |
EDI |
HIGH SURGE | |
10 | PY100 |
EDI |
HIGH SURGE | |
11 | PY100F |
EDI |
12 AMPERES HIGH SURGE | |
12 | PY10F |
EDI |
12 AMPERES HIGH SURGE |