The PY25F64HA is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating .
ister
- 3
*1024-Byte Security Registers with OTP Lock
128-bit Unique ID for each device
Fast Program and Erase Speed Typical
- 0.5ms Page program time
- 50ms 4K-byte sector erase time
- 0.15s 32K-byte block erase time
- 0.30s 64K-byte block erase time
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Consumption Typical
- 1.0uA Deep Power Down current
- 18uA Standby current
- 6mA Active Read current at 85MHz 4IO
- 6mA Active Program or Erase current
High Reliability
- 100,000 Program / Erase Cycles
- 20-year Data Retention
Industry Standard Green Package .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PY25Q01GLC |
Puya |
1G-bit Serial Multi I/O Flash Memory | |
2 | PY25Q16HB-Automotive |
Puya |
16M-bit Serial Multi I/O Flash Memory | |
3 | PY25Q512HB-Automotive |
Puya |
512M-bit Serial Multi I/O Flash Memory | |
4 | PY263 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
5 | PY264 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
6 | PY291A |
PYRAMID |
2K x 8 rEpROGRAMMABLE prom | |
7 | PY08 |
LEONE |
Relay Socket | |
8 | PY08-0 |
LEONE |
Relay Socket | |
9 | PY10 |
EDI |
HIGH SURGE | |
10 | PY100 |
EDI |
HIGH SURGE | |
11 | PY100F |
EDI |
12 AMPERES HIGH SURGE | |
12 | PY10F |
EDI |
12 AMPERES HIGH SURGE |