The PY25Q16HB-Auto is a serial interface Flash memory device designed for use in a wide variety of highvolume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its sector erase granularity it is ideal for data storage as well, elimin.
Register - 3
*1K Byte Security Registers with OTP Lock
128-bit Unique ID for each device
Fast Program and Erase Speed Typical - 0.4ms Page program time
- 40ms 4K-byte sector erase time
- 0.12s 32K-byte block erase time
- 0.15s 64K-byte block erase time
JEDEC Standard Manufacturer and Device ID Read Methodology
Ultra-Low Power Consumption Typical
- 1uA Deep Power Down current
- 18uA Standby current
- 8mA Active Read current at 85MHz
- 10mA Active Program or Erase current
High Reliability
- 100,000 Program / Erase Cycles
- 20-year Data Retention
Industry Standard Green.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PY25Q01GLC |
Puya |
1G-bit Serial Multi I/O Flash Memory | |
2 | PY25Q512HB-Automotive |
Puya |
512M-bit Serial Multi I/O Flash Memory | |
3 | PY25F64HA |
Puya |
64M-bit Serial Multi I/O Flash Memory | |
4 | PY263 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
5 | PY264 |
PYRAMID |
8K x 8 REPROGRAMMABLE PROM | |
6 | PY291A |
PYRAMID |
2K x 8 rEpROGRAMMABLE prom | |
7 | PY08 |
LEONE |
Relay Socket | |
8 | PY08-0 |
LEONE |
Relay Socket | |
9 | PY10 |
EDI |
HIGH SURGE | |
10 | PY100 |
EDI |
HIGH SURGE | |
11 | PY100F |
EDI |
12 AMPERES HIGH SURGE | |
12 | PY10F |
EDI |
12 AMPERES HIGH SURGE |