Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters L.
High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tj = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 60 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14 and 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Typ Max 100 96 148 17.
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN016-100BS |
nexperia |
N-channel MOSFET | |
2 | PSMN016-100BS |
NXP Semiconductors |
MOSFET | |
3 | PSMN016-100XS |
NXP Semiconductors |
MOSFET | |
4 | PSMN016-100YS |
nexperia |
N-channel MOSFET | |
5 | PSMN016-100YS |
NXP Semiconductors |
N-Channel MOSFET | |
6 | PSMN010-25YLC |
NXP Semiconductors |
MOSFET | |
7 | PSMN010-30MLD |
NXP |
N-channel MOSFET | |
8 | PSMN010-55D |
Philips |
N-channel logic level TrenchMOS transistor | |
9 | PSMN010-80YL |
nexperia |
N-channel MOSFET | |
10 | PSMN011-100YSF |
nexperia |
N-channel MOSFET | |
11 | PSMN011-30YL |
NXP Semiconductors |
MOSFET | |
12 | PSMN011-30YLC |
nexperia |
N-channel MOSFET |