PSMN011-30YLC - NXP Semiconductors

PSMN011-30YLC MOSFET

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower S.

Features

 High reliability Power SO8 package, qualified to 175°C
 Low parasitic inductance and resistance
 Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
 Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications
 DC-to-DC converters
 Load switching
 Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VG.