PSMN011-30YL - NXP Semiconductors

PSMN011-30YL MOSFET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applicati.

Features

„ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 25 °C VGS = 10 V; ID = 45 A; VDS = 15 V; see Figure 14; see Figu.