PSMN011-60MS - NXP

PSMN011-60MS N-channel MOSFET

Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive sources • LFPAK33 package is footprint compati.

Features

• High efficiency due to low switching and conduction losses
• Suitable for standard level gate drive sources
• LFPAK33 package is footprint compatible with other 3.3mm types
• Qualified to 175 °C 3. Applications
• AC-to-DC converters
• Synchronous rectification
• DC-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; .