N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain sourc.
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 100 A
g
RDS(ON) ≤ 9 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PSMN009-100B |
nexperia |
N-channel MOSFET | |
2 | PSMN009-100B |
Philips |
N-channel enhancement mode field-effect transistor | |
3 | PSMN009-100P |
nexperia |
N-channel MOSFET | |
4 | PSMN009-100P |
Philips |
N-channel enhancement mode field-effect transistor | |
5 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET | |
6 | PSMN002-25P |
NXP Semiconductors |
N-Channel MOSFET | |
7 | PSMN003-25W |
Philips |
N-channel logic level TrenchMOS transistor | |
8 | PSMN003-30B |
NXP Semiconductors |
N-Channel MOSFET | |
9 | PSMN003-30P |
NXP Semiconductors |
N-Channel MOSFET | |
10 | PSMN004-25B |
Philips |
N-channel logic level TrenchMOS transistor | |
11 | PSMN004-25P |
Philips |
N-channel logic level TrenchMOS transistor | |
12 | PSMN004-36B |
NXP Semiconductors |
N-Channel MOSFET |