Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PSMN009-100W |
Click to view a larger image
| Part Number | PSMN009-100W |
| Manufacturer | Philips |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and... |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCR... |
| Document |
 PSMN009-100W Data Sheet
PDF 28.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PSMN009-100B |
nexperia |
N-channel MOSFET |
|
| 2 | PSMN009-100B |
Philips |
N-channel enhancement mode field-effect transistor |
|
| 3 | PSMN009-100P |
nexperia |
N-channel MOSFET |
|
| 4 | PSMN009-100P |
Philips |
N-channel enhancement mode field-effect transistor |
|
| 5 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET |
|