PSMN009-100P - nexperia

PSMN009-100P N-channel MOSFET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Suitable for high frequ.

Features

 Low conduction losses due to low on-state resistance
 Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
 High frequency computer motherboard DC-to-DC convertors
 OR-ing applicationss 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; s.