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PSMN009-100P |
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| Part Number | PSMN009-100P |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communi... |
| Features |
Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications High frequency computer motherboard DC-to-DC convertors OR-ing applicationss 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; s... |
| Document |
 PSMN009-100P Data Sheet
PDF 771.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PSMN009-100B |
nexperia |
N-channel MOSFET |
|
| 2 | PSMN009-100B |
Philips |
N-channel enhancement mode field-effect transistor |
|
| 3 | PSMN009-100P |
Philips |
N-channel enhancement mode field-effect transistor |
|
| 4 | PSMN009-100W |
Philips |
N-channel TrenchMOS transistor |
|
| 5 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET |
|