PMZB380XN - NXP Semiconductors

PMZB380XN MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • Low threshold voltage • Ultra thin package profile of 0.37mm height 1.3 Applications • Relay driver • High.

Features

• Fast switching
• Trench MOSFET technology
• Low threshold voltage
• Ultra thin package profile of 0.37mm height 1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ - Max 30 12 930 Unit V V mA Static characteristics drain-source on-state resistance [1] - 0.38 0.46 Ω Device mounted on an FR4 P.