Planar Schottky barrier dual rectifier with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: ≤ 0.2 A • Reverse voltage: ≤ 30 V • Very low forward voltage • Ultra small and flat lead SMD plastic package 3. Applications .
• Forward current: ≤ 0.2 A
• Reverse voltage: ≤ 30 V
• Very low forward voltage
• Ultra small and flat lead SMD plastic package
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF
forward current
VR
reverse voltage
VF
forward voltage
IR
reverse current
Conditions
δ = 1; Tamb ≤ 25 °C
[1]
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C
VR = 30 V; Tj = .
Planar Maximum Efficiency General Application (MEGA) Schottky barrier dual rectifier with an integrated guard ring for s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG3002AEB |
Philips |
Low VF MEGA Schottky barrier diode | |
2 | PMEG3002AEL |
NXP Semiconductors |
0.2A very low VF MEGA Schottky barrier rectifier | |
3 | PMEG3002AEL |
nexperia |
MEGA Schottky barrier rectifier | |
4 | PMEG3002AELD |
NXP Semiconductors |
0.2A low VF MEGA Schottky barrier rectifier | |
5 | PMEG3002AELD |
nexperia |
MEGA Schottky barrier rectifier | |
6 | PMEG3002AESF |
NXP |
MEGA Schottky barrier rectifier | |
7 | PMEG3002AESF |
nexperia |
MEGA Schottky barrier rectifier | |
8 | PMEG3002EEF |
nexperia |
VF MEGA Schottky barrier rectifier | |
9 | PMEG3002EJ |
NXP |
200 MA Low Vf MEGA Schottky Barrier Rectifier | |
10 | PMEG3002ESF |
NXP |
MEGA Schottky barrier rectifier | |
11 | PMEG3002ESF |
nexperia |
MEGA Schottky barrier rectifier | |
12 | PMEG3001EEF |
nexperia |
VF MEGA Schottky barrier rectifier |