Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package. 4 columns PMEG3002AEB PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 MGU328 Marking code: B1. The marking bar indicates the cathode. Fig.1 Simplified outline .
• Forward current: 0.2 A
• Reverse voltage: 30 V
• Very low forward voltage
• Ultra small SMD package. APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low voltage rectification
• Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.
4 columns
PMEG3002AEB
PINNING PIN 1 2 DESCRIPTION cathode anode
1
2
MGU328
Marking code: B1..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG3002AEL |
NXP Semiconductors |
0.2A very low VF MEGA Schottky barrier rectifier | |
2 | PMEG3002AEL |
nexperia |
MEGA Schottky barrier rectifier | |
3 | PMEG3002AELD |
NXP Semiconductors |
0.2A low VF MEGA Schottky barrier rectifier | |
4 | PMEG3002AELD |
nexperia |
MEGA Schottky barrier rectifier | |
5 | PMEG3002AESF |
NXP |
MEGA Schottky barrier rectifier | |
6 | PMEG3002AESF |
nexperia |
MEGA Schottky barrier rectifier | |
7 | PMEG3002EEF |
nexperia |
VF MEGA Schottky barrier rectifier | |
8 | PMEG3002EJ |
NXP |
200 MA Low Vf MEGA Schottky Barrier Rectifier | |
9 | PMEG3002ESF |
NXP |
MEGA Schottky barrier rectifier | |
10 | PMEG3002ESF |
nexperia |
MEGA Schottky barrier rectifier | |
11 | PMEG3002TV |
nexperia |
MEGA Schottky barrier dual rectifier | |
12 | PMEG3002TV |
NXP |
very low VF MEGA Schottky barrier dual rectifier |