Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits Forward current: IF ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low fo.
Forward current: IF ≤ 0.2 A Reverse voltage: VR ≤ 30 V Low forward voltage: VF ≤ 480 mV Ultra small and leadless SMD plastic package AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Ultra high-speed switching 1.4 Quick reference data Table 1. www.DataSheet4U.net Quick reference data Conditions square wave; δ = 0.5; f = 20 kHz Tamb ≤ 125 °C Tsp ≤ 140 °C VR = 10 V IF = 200 mA [.
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PMEG3002AEL |
NXP Semiconductors |
0.2A very low VF MEGA Schottky barrier rectifier | |
2 | PMEG3002AEL |
nexperia |
MEGA Schottky barrier rectifier | |
3 | PMEG3002AEB |
Philips |
Low VF MEGA Schottky barrier diode | |
4 | PMEG3002AESF |
NXP |
MEGA Schottky barrier rectifier | |
5 | PMEG3002AESF |
nexperia |
MEGA Schottky barrier rectifier | |
6 | PMEG3002EEF |
nexperia |
VF MEGA Schottky barrier rectifier | |
7 | PMEG3002EJ |
NXP |
200 MA Low Vf MEGA Schottky Barrier Rectifier | |
8 | PMEG3002ESF |
NXP |
MEGA Schottky barrier rectifier | |
9 | PMEG3002ESF |
nexperia |
MEGA Schottky barrier rectifier | |
10 | PMEG3002TV |
nexperia |
MEGA Schottky barrier dual rectifier | |
11 | PMEG3002TV |
NXP |
very low VF MEGA Schottky barrier dual rectifier | |
12 | PMEG3001EEF |
nexperia |
VF MEGA Schottky barrier rectifier |