PJD1NA80 - Pan Jit International

PJD1NA80 800V N-Channel MOSFET

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free.

Features

 RDS(ON), VGS@10V,[email protected]<16Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data
 Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
 SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
 TO-252 Approx. Weig.