PPJD14P06-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features RDS(ON), VGS@-10V,ID@-7A<115mΩ RDS(ON), [email protected],[email protected]<160mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance w.
RDS(ON), VGS@-10V,ID@-7A<115mΩ
RDS(ON), [email protected],[email protected]<160mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PAR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PJD14P06A |
Pan Jit International |
60V P-Channel Enhancement Mode MOSFET | |
2 | PJD14P06A-AU |
PAN JIT |
6V P-Channel MOSFET | |
3 | PJD14P10A |
Pan Jit International |
100V P-Channel Enhancement Mode MOSFET | |
4 | PJD10P10A |
Pan Jit International |
100V P-Channel Enhancement Mode MOSFET | |
5 | PJD11N60D |
Potens semiconductor |
N-Channel MOSFETS | |
6 | PJD11N65D |
Potens semiconductor |
N-Channel MOSFETS | |
7 | PJD15N06L |
Pan Jit International |
N-Channel Enhancement Mode MOSFET | |
8 | PJD16N08A |
Pan Jit International |
75V N-Channel MOSFET | |
9 | PJD1NA50 |
Pan Jit International |
500V N-Channel MOSFET | |
10 | PJD1NA60A |
Pan Jit International |
600V N-Channel MOSFET | |
11 | PJD1NA80 |
Pan Jit International |
800V N-Channel MOSFET | |
12 | PJD04N60D |
Potens semiconductor |
N-Channel MOSFETS |