PJD15N06L - Pan Jit International

PJD15N06L N-Channel Enhancement Mode MOSFET

www.DataSheet4U.com PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99.

Features

• RDS(ON), VGS@10V,IDS@10A=40mΩ
• RDS(ON), [email protected],[email protected]=50mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 15N06L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo .