PHP29N08T - nexperia

PHP29N08T N-channel MOSFET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High noise immunity due to high gate threshold voltage „ Low conduction losses due to low.

Features

„ High noise immunity due to high gate threshold voltage „ Low conduction losses due to low on-state resistance 1.3 Applications „ Industrial motor control 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 11 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 29 A; VDS = 60 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 1.