N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1.
s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) [1] mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. SOT404 (D2-PAK) Philips Semiconductors PHP20N06T; PHB20.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP20N06 |
NXP |
N-channel TrenchMOS transistor | |
2 | PHP20N06 |
NXP |
PowerMOS transistor | |
3 | PHP20N06E |
NXP |
PowerMOS transistor | |
4 | PHP20NQ20T |
NXP |
N-channel TrenchMOS standard level FET | |
5 | PHP206 |
NXP |
Dual P-channel enhancement mode MOS transistor | |
6 | PHP208 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module | |
7 | PHP212 |
NXP |
Dual P-channel enhancement mode MOS transistor | |
8 | PHP212L |
NXP |
Dual P-channel enhancement mode MOS transistor | |
9 | PHP21N06 |
NXP |
TrenchMOSO transistor Standard level FET | |
10 | PHP21N06 |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
11 | PHP21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
12 | PHP21N06T |
NXP |
TrenchMOSO transistor Standard level FET |