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N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1.
s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) [1] mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. SOT404 (D2-PAK) Philips Semiconductors PHP20N06T; PHB20.
PHP20N06 - NXP
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availabilit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHP20N06E |
NXP |
PowerMOS transistor |
|
| 2 | PHP20N06T |
NXP |
N-channel TrenchMOS transistor |
|
| 3 | PHP20N06T |
nexperia |
N-channel MOSFET |
|
| 4 | PHP20NQ20T |
NXP |
N-channel TrenchMOS standard level FET |
|
| 5 | PHP206 |
NXP |
Dual P-channel enhancement mode MOS transistor |
|
| 6 | PHP208 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module |
|
| 7 | PHP212 |
NXP |
Dual P-channel enhancement mode MOS transistor |
|
| 8 | PHP212L |
NXP |
Dual P-channel enhancement mode MOS transistor |
|
| 9 | PHP21N06 |
NXP |
TrenchMOSO transistor Standard level FET |
|
| 10 | PHP21N06 |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 11 | PHP21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 12 | PHP21N06T |
NXP |
TrenchMOSO transistor Standard level FET |
|