PHP28NQ15T - nexperia

PHP28NQ15T N-channel MOSFET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Increased efficiency during switching due to low body diode recovered charge „ Suitable f.

Features

„ Increased efficiency during switching due to low body diode recovered charge „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ Class-D audio amplifiers „ DC-to-AC inverters „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 1.