N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB24N03T.
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB24N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 24 60 175 56 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maxim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHB24N03LT |
NXP |
TrenchMOS transistor Logic level FET | |
2 | PHB20N06T |
NXP |
N-channel TrenchMOS standard level FET | |
3 | PHB20N06T |
nexperia |
N-channel MOSFET | |
4 | PHB20NQ20T |
NXP |
N-channel TrenchMOS standard level FET | |
5 | PHB21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
6 | PHB21N06T |
NXP |
TrenchMOS transistor Standard level FET | |
7 | PHB222NQ04LT |
NXP Semiconductors |
N-channel TrenchMOSTM logic level FET | |
8 | PHB225NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
9 | PHB23NQ10LT |
NXP |
N-channel TrenchMOS logic levelFET | |
10 | PHB23NQ10T |
NXP |
N-channel TrenchMOS transistor | |
11 | PHB23NQ15T |
NXP |
N-channel TrenchMOS transistor | |
12 | PHB27NQ10T |
NXP |
N-channel TrenchMOS transistor |