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PHB23NQ10T - NXP

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PHB23NQ10T N-channel TrenchMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mount.

Features


• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD23NQ10T is supplied in the SOT428 (DPAK) surface mountin.

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