PHB24N03T |
Part Number | PHB24N03T |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance ... |
Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB24N03T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 24 60 175 56 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maxim... |
Document |
PHB24N03T Data Sheet
PDF 61.83KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHB24N03LT |
NXP |
TrenchMOS transistor Logic level FET | |
2 | PHB20N06T |
NXP |
N-channel TrenchMOS standard level FET | |
3 | PHB20N06T |
nexperia |
N-channel MOSFET | |
4 | PHB20NQ20T |
NXP |
N-channel TrenchMOS standard level FET | |
5 | PHB21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |