PHB24N03T NXP TrenchMOS transistor Standard level FET Datasheet, en stock, prix

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PHB24N03T

NXP
PHB24N03T
PHB24N03T PHB24N03T
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Part Number PHB24N03T
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance ...
Features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB24N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 24 60 175 56 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maxim...

Document Datasheet PHB24N03T Data Sheet
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