PFM1N70 - Wing On

PFM1N70 N-Channel MOSFET

Nov 2008 PFM1N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.8 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 11.5 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (.

Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.8 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 11.5 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFM1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 11.5 Ω ID = 0.8
* A Drain  Gate 
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●  Source TO-92 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value V.