PFM21030 - Cree Research

PFM21030 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

w t e e SPECIFICATION PFM21030 h S MHz, 30W, 2-Stage Power Module 2110-2170 a at Enhancement-Mode Lateral MOSFETs D . w versatile UMTS module provides excellent linearity and efficiency in wThis a low-cost surface mount package. The PFM21030 includes two stages 4U m o .c PRELIMINARY Package Type: Surface Mount PN: PFM21030SM of amplification, along wit.

Features

ET channel temperature for reliable operation.
• 27 dB Gain
• 30 Watts Peak Output Power
• Internal Tracking FETs (for improved bias control) Gate 1 RF IN w Lead Lead Lead Lead Lead w .D w Input Match S1 Module Schematic Diagram Module Substrate Q2 Die Carrier Q2 Output Match Input Match Output Match t a S a e h t e U 4 .c m o Package Type: Flange PN: PFM21030F
• WCDMA Performance 5 Watts Average Output Level 18% Power Added Efficiency
  –45 dBc ACPR Q1 Die Carrier Q1 Drain 2 RF OUT Lead S2 Sense S1 Gate 2 Sense S2 D1 Note: Additionally, there are 250K Ohm resistors connect.