PFM1N70 |
Part Number | PFM1N70 |
Manufacturer | Wing On |
Description | Nov 2008 PFM1N70 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Char... |
Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 4.8 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode power supply (SMPS) DC-AC converters.
PFM1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 11.5 Ω ID = 0.8* A
Drain
Gate
● ◀▲ ● ● Source TO-92 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value V... |
Document |
PFM1N70 Data Sheet
PDF 903.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PFM1N60 |
Wing On |
N-Channel MOSFET | |
2 | PFM1N80 |
Wing On |
N-Channel MOSFET | |
3 | PFM1412DEB7V |
DELTA |
DC FANS | |
4 | PFM18030 |
Cree Research |
2-Stage Power Module Enhancement-Mode Lateral MOSFETs | |
5 | PFM19030 |
Cree Research |
2-Stage Power Module Enhancement-Mode Lateral MOSFETs |