The PE84244 MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input. Using a +3-volt nominal power supply voltage, a 1 dB compression point of +27 dBm can be achieved. The PE84244 also exhibits excellent isolation of 28 dB at 2..
• Single +3.0-volt Power Supply
• Low Insertion loss: 0.70 dB up to 2.0 GHz
• High isolation of 39 dB at 1.0 GHz, 28 dB at 2.0 GHz, typical
• Typical 1 dB compression of +27 dBm
• Single-pin CMOS logic control
• Packaged in 8-lead MSOP
Figure 2. Package Type
RF1 CTRL
RF2
8-lead MSOP
Table 1. Electrical Specifications -55 °C to +125 °C, VDD = 3 V (ZS = ZL = 50 Ω)
Parameter
Operation Frequency Insertion Loss Isolation
– RFCommon to RF1/RF2 Isolation
– RF1 to RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Video Feedthrough
2 1
Conditions
Minimum
DC
Typical
Maximum
3000
Units
M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PE84140 |
Peregrine Semiconductor |
Ultra-High Linearity UltraCMOS | |
2 | PE8050 |
Fairchild Semiconductor |
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers | |
3 | PE80H11 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
4 | PE80H13 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
5 | PE80Q04N |
Nihon Inter Electronics |
SBD MODULE | |
6 | PE80QL03N |
Nihon Inter Electronics |
SBD | |
7 | PE8200 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
8 | PE8200 |
PE |
Trimer | |
9 | PE8203 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
10 | PE8203A |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
11 | PE8205 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
12 | PE8205 |
ChipSourceTek |
N-Channel Enhancement Mode Power MOSFET |