PE8205 - ChipSourceTek

PE8205 N-Channel Enhancement Mode Power MOSFET

The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8205 General Features ● VDS = 20V, ID = 6A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.8V RDS(ON) < 36mΩ @ VGS=2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acqu.

Features

● VDS = 20V, ID = 6A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.8V RDS(ON) < 36mΩ @ VGS=2.5V Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● Battery Protection k
● Load switch Marking and pin assignment ourceTe SOT-23-6L S Absolute Maximum Ratings (TA=25℃ unless otherwise noted) ipParameter Drain-Source Voltage h Gate-Source Voltage C Drain Current-Continuous Symbol VDS VGS ID Rating 20 ±12 6 Unit V V A Pulsed Drain Current (Note 1) IDM 24 A Maximum Power Dissipation PD 1.5 W Operating.