The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with differential signals at all ports (RF, LO, IF), allowing mixers to be built that use LO powers from -7 dBm to +20 dBm. Typical applications range from frequency up/downconversion to.
• Ultimate Quad MOSFET array
• Ultra-high linearity, broadband
performance beyond 6.0 GHz
• Ideal for mixer applications
• Up/down conversion
• Low conversion loss
• High LO Isolation
• Optimized for stringent military
applications
Figure 1. Functional Diagram
Figure 2. Package Type
8-lead MSOP
LO
IF
RF
Table 1. AC and DC Electrical Specifications @ +25 °C
Symbol
FTYP VDS VDS Match VT R DS
Characteristics
Operating Frequency Range Drain-Source Voltage Drain-Source Voltage Match Threshold Voltage Drain-Source ‘ON’ Resistance
1
Min
DC
Typ
6.0 330 20 -100 8.25
Max
Units
GHz mV mV mV .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PE84244 |
Peregrine Semiconductor |
SPDT MOSFET RF SWITCH | |
2 | PE8050 |
Fairchild Semiconductor |
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers | |
3 | PE80H11 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
4 | PE80H13 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
5 | PE80Q04N |
Nihon Inter Electronics |
SBD MODULE | |
6 | PE80QL03N |
Nihon Inter Electronics |
SBD | |
7 | PE8200 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
8 | PE8200 |
PE |
Trimer | |
9 | PE8203 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
10 | PE8203A |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
11 | PE8205 |
semi one |
N-Channel Enhancement Mode Power MOSFET | |
12 | PE8205 |
ChipSourceTek |
N-Channel Enhancement Mode Power MOSFET |