PDMB50B12 - Nihon Inter Electronics Corporation

PDMB50B12 IGBT

IGBT MODULE CIRCUIT Dual 50A 1200V PDMB50B12 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB50B12 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 Unit V V A W °.

Features

L= 12 ohm RG= 20 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 4200 0.25 0.40 0.25 0.80 Max. 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 50 100 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=100A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - M.