These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
20V/6.5A, RDS(ON) =22mΩ@VGS = 4.5V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
MB / VGA / Vcore
POL Applications
SMPS 2nd SR
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TA=25℃) Drain Current
– Continuous (TA=70℃) Drain Current
– Pulsed1 Power Dissipation (TA=25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDK2314 |
Potens semiconductor |
N-Channel MOSFETs | |
2 | PDK-P-M |
Advanced XTAL Products |
QUARTZ PRESSURE TRANSDUCER | |
3 | PDK3612 |
Potens semiconductor |
N-Channel MOSFETs | |
4 | PDK3908 |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PDK3912 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDK6912 |
Potens semiconductor |
N-Channel MOSFETs | |
7 | PDK82C13 |
PADAUK |
Field Programmable Processor | |
8 | PDK82C13-D |
PADAUK |
Field Programmable Processor | |
9 | PD-20 |
Merrimac Industries |
0 Power Dividers / Combiners | |
10 | PD-3100 |
Optoway Technology |
WDM PIN PHOTODIODES | |
11 | PD-5100 |
Optoway Technology |
WDM PIN PHOTODIODES | |
12 | PD-9002GHO |
Microsemi |
Outdoor PoE Passive Hub |