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PDK2612A |
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| Part Number | PDK2612A |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
20V/6.5A, RDS(ON) =22mΩ@VGS = 4.5V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (TA=25... |
| Document |
 PDK2612A Data Sheet
PDF 640.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PDK2314 |
Potens semiconductor |
N-Channel MOSFETs |
|
| 2 | PDK-P-M |
Advanced XTAL Products |
QUARTZ PRESSURE TRANSDUCER |
|
| 3 | PDK3612 |
Potens semiconductor |
N-Channel MOSFETs |
|
| 4 | PDK3908 |
Potens semiconductor |
N-Channel MOSFETs |
|
| 5 | PDK3912 |
Potens semiconductor |
N-Channel MOSFETs |
|