PDK3612 - Potens semiconductor

PDK3612 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

 20V, 6.5A, RDS(ON) =32mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 Green Device Available
 Suit for 1.8V Gate Drive Applications Applications
 Notebook
 Load Switch
 Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Power Diss.